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Article
Correction to: Metal oxide semiconductor thin-film transistor backplanes for displays and imaging
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Article
Metal oxide semiconductor thin-film transistor backplanes for displays and imaging
Oxide semiconductor thin-film transistors are becoming a key backplane technology for active-matrix flat panel displays and imagers. The oxide semiconductor has a wide band gap, hence, low OFF current, and red...
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Article
Vt-Shift Compensating Amorphous Silicon Pixel Circuits for Flexible OLED Displays
In this paper, we present design considerations pertinent to amorphous silicon pixel circuits for mechanically flexible active matrix display applications. We describe both circuit topologies and pixel archite...
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Article
Above-Threshold Parameter Extraction Including Contact Resistance Effects for a-Si:H TFTs on Glass and Plastic
This paper presents a fast and accurate method for extraction of the above-threshold physical parameters (such as threshold voltage, power parameter, effective mobility, and contact resistance) from measuremen...
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Article
Backplane Requirements for Active Matrix Organic Light Emitting Diode Displays
Organic light emitting diode (OLED) displays are a serious competitor to liquid crystal displays in view of their superior picture quality, higher contrast, faster on/off response, thinner profile, and high po...
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Chapter
Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors
Low-temperature processing and characterization of amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si) materials and devices are reviewed. An overview of silicon-based low-temperature thin-film diel...
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Article
Physically Based Compact Model for Segmented a-Si:H n-i-p Photodiodes
Hydrogenated amorphous silicon (a–Si:H) n–i–p photodiodes are used as pixel sensor elements in large-area flat-panel detectors for medical imaging diagnostics. Accurate model of the sensor plays an imperative rol...
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Article
Noise Analysis of Image Sensor Arrays for Large-Area Biomedical Imaging
Large area digital imaging made possible by amorphous silicon thin-film transistor (a-Si TFT) technology, coupled with a-Si photo-sensors, provides an excellent readout platform to form an integrated medical i...
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Article
Temperature Dependence of Leakage Current in Segmented a-Si:Hn-i-p Photodiodes
Hydrogenated amorphous silicon (a–Si:H) n–i–p photodiodes may be used as the pixel sensor element in large-area array imagers for medical diagnostics applications. The dark current level is an important parameter...
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Article
Noise Performance of High Fill Factor Pixel Architectures for Robust Large-Area Image Sensors using Amorphous Silicon Technology
Large area digital imaging made possible by amorphous silicon thin-film transistor (a-Si TFT) technology, coupled with a-Si photo-sensors, provides an excellent readout platform to form an integrated medical i...
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Article
High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process
We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150 °C) plasma-enhanced chemi...
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Article
Low Temperature a-Si:H Pixel Circuits for Mechanically Flexible AMOLED Displays
This paper presents the first demonstration of amorphous silicon (a-Si:H) thin film transistor (TFT) circuit integration on plastic substrates. The circuits compensate for material shortcomings such as metasta...
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Article
Intrinsic and Doped μο-8ΐ:Η TFT Layers using 13.56 MHz PECVD at 250 oC
Undoped and n+ hydrogenated microcrystalline silicon (µc-Si:H) films for thin film transistors (TFTs) were deposited at a temperature of 250 oC with 99 ~ 99.6 % hydrogen dilution of silane by standard 13.56 MHz p...
