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  1. Article

    Open Access

    An ultra high-endurance memristor using back-end-of-line amorphous SiC

    Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above t...

    Omesh Kapur, Dongkai Guo, Jamie Reynolds, Daniel Newbrook, Yisong Han… in Scientific Reports (2024)

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