Page
%P
-
Article
Raman Excitation Profile of the G-band Enhancement in Twisted Bilayer Graphene
A resonant Raman study of twisted bilayer graphene (TBG) samples with different twisting angles using many different laser lines in the visible range is presented. The samples were fabricated by CVD technique ...
-
Article
Open AccessIn situ observation of step-edge in-plane growth of graphene in a STEM
It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III–V semiconductors. Here we report a direct observation of graphene growth and domain boundary formati...
