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Article
Open AccessThickness dependent electronic properties of Pt dichalcogenides
Platinum-based transition metal dichalcogenides have been gaining renewed interest because of the development of a new method to synthesize thin film structures. Here, using first-principles calculation, we ex...
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Article
Open AccessPrediction of Quantum Anomalous Hall Effect in MBi and MSb (M:Ti, Zr, and Hf) Honeycombs
The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magneti...
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Article
Open AccessChemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs
The search for novel materials with new functionalities and applications potential is continuing to intensify. Quantum anomalous Hall (QAH) effect was recently realized in magnetic topological insulators (TIs)...
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Article
Open AccessPrediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb
Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase i...
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Article
Open AccessTwo-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap
We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topolog...
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Article
Open AccessPredicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga and Tl) with group V (N, P, As, Sb and Bi) elements on Si...