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  1. No Access

    Article

    Angular Magnetic-Field-Dependent Tunneling Magnetoresistance Controlled by Electric Fields in an MTJ/PMN-PT Multiferroic Heterostructure

    The electric-field modulation of magnetization switching is an energy-efficient method for the design of potential spintronic devices. In this study, a magnetic tunnel junction (MTJ)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN...

    Shaoting Wang, Yuanjun Yang, Lan** He, Wanyu Li… in Journal of Electronic Materials (2023)

  2. No Access

    Chapter and Conference Paper

    Simulation of Lithography-caused Gate Length and Interconnect Linewidth Variational Impact on Circuit Performance in Nanoscale Semiconductor Manufacturing

    As the critical dimension (CD) is scaled into nanometer dimensions, operating frequencies exceed a gigahertz, and more functional blocks are added into systems on chip (SoC), interconnect has become a bottlene...

    Munkang Choi, Cheng Jia, Linda Milor in Simulation of Semiconductor Processes and … (2004)