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Chapter
Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments
Wide bandgap semiconductors (WBGS) were initially proposed for high voltage switching devices, and now they are commercially available. However, WBGS materials also offer operation in extreme environments, inc...
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Article
Open AccessInvestigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the differe...
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Article
Open AccessIntegration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also ope...
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Article
Material aspects of wide temperature range amplifier design in SiC bipolar technologies
Silicon carbide (SiC) is the main semiconductor alternative for low loss high voltage devices. The wide energy band gap also makes it suitable for extreme environment electronics, including very high temperatu...
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Article
Integrated circuits in silicon carbide for high-temperature applications
High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high...
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Article
Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process
Crystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (...
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Article
SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance
Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bi...
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Foreword
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Foreword
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Article
CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation
In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 μΩ cm)1 is shown as a reliable contact material to n- and p-type 6H-SiC for very high temperature ...
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Article
Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient a...