Skip to main content

11 Result(s)

within Carl-Mikael Zetterling Remove this filter

and

  1. No Access

    Chapter

    Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments

    Wide bandgap semiconductors (WBGS) were initially proposed for high voltage switching devices, and now they are commercially available. However, WBGS materials also offer operation in extreme environments, inc...

    Carl-Mikael Zetterling, Saleh Kargarrazi… in Next-Generation ADCs, High-Performance Pow… (2020)

  2. Article

    Open Access

    Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

    Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the differe...

    Mattias Ekström, Andrea Ferrario, Carl-Mikael Zetterling in Journal of Electronic Materials (2019)

    Download PDF (942 KB)

  3. Article

    Open Access

    Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also ope...

    Mattias Ekström, Sergiy Khartsev, Mikael Östling… in Journal of Electronic Materials (2017)

    Download PDF (914 KB)

  4. No Access

    Article

    Material aspects of wide temperature range amplifier design in SiC bipolar technologies

    Silicon carbide (SiC) is the main semiconductor alternative for low loss high voltage devices. The wide energy band gap also makes it suitable for extreme environment electronics, including very high temperatu...

    Raheleh Hedayati, Carl-Mikael Zetterling in Journal of Materials Research (2016)

  5. No Access

    Article

    Integrated circuits in silicon carbide for high-temperature applications

    High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high...

    Carl-Mikael Zetterling in MRS Bulletin (2015)

  6. No Access

    Article

    Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

    Crystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (...

    Jipo Huang, Lianwei Wang, Jun Wen, Yuxia Wang… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance

    Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bi...

    Mikael Östling, Martin Domeij, Carina Zaring… in MRS Online Proceedings Library (2010)

  8. No Access

    Article

    Foreword

    Michael Capano, Russ Dupuis, Joan Redwing… in Journal of Electronic Materials (2002)

  9. No Access

    Article

    Foreword

    Ilesanmi Adesida, Joan Redwing, Laura Rea… in Journal of Electronic Materials (2001)

  10. No Access

    Article

    CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

    In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 μΩ cm)1 is shown as a reliable contact material to n- and p-type 6H-SiC for very high temperature ...

    Nils Lundberg, Mikael Östling, Carl-Mikael Zetterling… in Journal of Electronic Materials (2000)

  11. No Access

    Article

    Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

    Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient a...

    Carl-Mikael Zetterling, Mikael Östling in MRS Online Proceedings Library (1994)