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    Article

    Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

    Ion implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite mate...

    A. Meldrum, L. A. Boatner, C. W. White, R. F. Haglund Jr. in MRS Online Proceedings Library (2011)

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    Article

    Formation of Ferromagnetic FePt Nanoparticles by Ion Implantation

    Oriented ferromagnetic FePt nanoparticles with the face-centered tetragonal L10 structure were produced in Al2O3 single crystal hosts by ion implantation and annealing. Both the orientation and particle-size of t...

    C. W. White, S. P. Withrow, J. D. Budai, L. A. Boatner in MRS Online Proceedings Library (2011)

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    Article

    Controlling the Microstructure and Magnetic Properties of Ferromagnetic Nanocrystals Produced by Ion Implantation

    Ion implantation coupled with annealing is a versatile and flexible approach to creating ferromagnetic near-surface nanocomposites that represent a wide range of particle/host combinations. We have used ion im...

    K. S. Beaty, A. Meldrum, J. P. Franck, K. Sorge in MRS Online Proceedings Library (2011)

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    Article

    Using Ion Beams to Modify Nanocrystalline Composites: Co Nanoparticles in Sapphire

    Ion implantation and thermal processing were used to create a layer of Co nanoclusters embedded in the near-surface region of single-crystal sapphire. The Co nanoparticles ranged in size from 2-20 nm and were ...

    A. Meldrum, K. S. Beaty, M. Lam, C. W. White, R. A. Zuhr in MRS Online Proceedings Library (2011)

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    Article

    Compound Semiconductor Nanocrystals formed by Sequential Ion Implantation

    Ion implantation and thermal processing have been used to synthesize compound semiconductor nanocrystals (SiGe, GaAs, and CdSe) in both SiO2 and (0001) Al2O3. Equal doses of each constituent are implanted sequent...

    C. W. White, J. D. Budai, J. G. Zhu, S. P. Withrow in MRS Online Proceedings Library (2011)

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    Article

    Semiconductor Nanocrystals formed in SiO2 by Ion Implantation

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO2 by ion implantation and subsequent thermal annealing. The microstructure of thes...

    Jane G. Zhu, C. W. White, J. D. Budai, S. P. Withrow in MRS Online Proceedings Library (2011)

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    Article

    Ion Implantation and Annealing of Oxides

    Ion implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalli...

    C. W. White, L. A. Boatner, P. S. Sklad, C. J. Mchargue in MRS Online Proceedings Library (2011)

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    Article

    Kinetic Effects and Mechanisms Limiting Substitutional Solubility in the Formation of Supersaturated Alloys by Pulsed Laser Annealing

    Pulsed laser annealing of silicon implanted by Group (III, V) dopants leads to the formation of supersaturated alloys by nonequilibrium processes occurring in the interfacial region during liquid phase epitaxi...

    C. W. White, B. R. Appleton, B. Stritzker, D. M. Zeiner in MRS Online Proceedings Library (2011)

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    Article

    A Leed Investigation of (111) Oriented Si, Ge and GaAs Surfaces Following Pulsed Laser Irradiation

    The low energy electron diffraction (LEED) patterns obtained from clean (111) oriented Si, Ge and GaAs single crystals subsequent to their irradiation with the output of a pulsed ruby laser in an ultra-high va...

    D. M. Zehner, J. R. Noonan, H. L. Davis, C. W. White in MRS Online Proceedings Library (2011)

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    Article

    Laser Induced Defects and Materials Interactions in the V-Si System

    Pulsed laser annealing has been evaluated as a technique for fabricating superconducting V3Si from multilayer V-Si samples, and the nature of laser-induced defects in V3Si single crystals has been examined. Corre...

    B. R. Appleton, B. Stritzker, C. W. White, J. Narayan in MRS Online Proceedings Library (2011)

  11. No Access

    Chapter

    Structure and Properties of Nanoparticles Formed by Ion Implantation

    This chapter broadly describes the formation, basic microstructure, and fundamental optoelectronic properties of nanocomposites synthesized by ion implantation. It is not meant as a complete literature survey ...

    A. Meldrum, R. Lopez, R. H. Magruder, L. A. Boatner in Materials Science with Ion Beams (2010)

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    Article

    Luminescence of Silicon Nanocrystals in SiO2: Effects of Excitation Spectrum

    Silicon nanocrystals formed by ion implantation and annealing of fused silica wafers show a strong, broad photoluminescence (PL) peak centered at a wavelength between 750 and 900 nm, depending on the processin...

    A. Hryciw, C. W. White, K. H. Chow, A. Meldrum in MRS Online Proceedings Library (2004)

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    Article

    Ion Beam Synthesis and Optical Properties of Zn and Zno Nanocrystals in Sio2 and Caf2 Substrates

    Ion implantation was used to inject zinc ions into crystalline CaF2 and amorphous SiO2 substrates. Zn or ZnO nanoparticles were formed after annealing in a reducing (4% H2 + 96%Ar) or an oxidizing (10%O2 + 90% Ar...

    Y. C. Liu, R. Mu, H. Y. Xu, Y. M. Lu, D. Z. Shen in MRS Online Proceedings Library (2004)

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    Article

    Luminescence and Microstructure of Microspheres Containing Silicon Nanocrystals

    The strong visible photoluminescence (PL) of silicon nanocrystals has recently been the focus of considerable research interest. Nanocrystal composites produced by silicon implantation of a fused silica wafer ...

    C. A. Ryan, A. Meldrum, C. W. White in MRS Online Proceedings Library (2004)

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    Article

    Design of a nanoscale silicon laser

    The recent observation of optical gain from silicon nanocrystals embedded in SiO2 opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser arch...

    S.L. Jaiswal, J.T. Simpson, S.P. Withrow, C.W. White, P.M. Norris in Applied Physics A (2003)

  16. No Access

    Chapter

    Experimental Observation Of Optical Amplification In Silicon Nanocrystals

    Silicon, as an indirect band gap semiconductor, is a poor light emitter and, therefore, has been considered as unsuitable for optoelectronic application. The situation has been changed with discovery of light ...

    M. Ivanda, U. V. Desnica, C. W. White, W. Kiefer in Towards the First Silicon Laser (2003)

  17. No Access

    Article

    Nanocrystals in crystalline silicon: Void formation and hollow particles

    Nanophase precipitates of CdS formed in amorphous SiO2 by ion implantation and thermal processing have recently been found to exhibit a “hollow-particle” or “shell-like” microstructure. The present investigations...

    A. Meldrum, S. Honda, C. W. White, R. A. Zuhr in Journal of Materials Research (2001)

  18. No Access

    Article

    Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

    Ion implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite mate...

    A. Meldrum, L. A. Boatner, C. W. White, R. F. Haglund Jr. in MRS Online Proceedings Library (2001)

  19. No Access

    Article

    Ion-Irradiation-Induced Amorphization Of Cadmium Niobate Pyrochlore

    Irradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-imp...

    A. Meldrum, K. Beaty, L. A. Boatner, C. W. White in MRS Online Proceedings Library (2001)

  20. No Access

    Chapter and Conference Paper

    Nonlinear Dispersion Properties Of Sub-wavelength Photonic Crystals

    Nonlinear pulse compression and pulse broadening have been demonstrated with a coherent array of sub-rnicron silica spheres embedded with silicon nanoparticles (‘nano with nano’). OCIS codes: (320.7110) Ultrafast...

    S. Vijayalakshmi, Y. Zhang, Gul Yaglioglu, R. Dorsinville in Ultrafast Phenomena XII (2001)

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