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  1. No Access

    Article

    Effect of indium do** on Ge2Sb2Te5 thin films for phase-change optical storage

    The influence of In do** on the crystallization kinetics of Ge2Sb2Te5 has been investigated using four-point-probe electrical resistance measurements, grazing incidence X-ray diffraction (XRD), X-ray reflecto...

    K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, M. Wuttig in Applied Physics A (2005)

  2. No Access

    Article

    Assessment of Se based phase change alloy as a candidate for non-volatile electronic memory applications

    The structural, electrical and optical properties of the phase change alloy AgSbSe2 were investigated and compared with its Te-based counterpart AgSbTe2. A huge electrical resistance change of more than four orde...

    K. Wang, C. Steimer, R. Detemple, D. Wamwangi, M. Wuttig in Applied Physics A (2005)

  3. No Access

    Chapter and Conference Paper

    OPTICAL AND ELECTRONIC DATA STORAGE WITH PHASE CHANGE MATERIALS: FROM CRYSTAL STRUCTURES TO KINETICS

    We summarize the current understanding of how stoichiometry affects structure, optical and electronic properties and the transition kinetics of phase change materials for rewritable optical and nonvolatile ele...

    C. STEIMER, H. DIEKER, D. WAMWANGI… in Functional Properties of Nanostructured Ma… (2006)

  4. No Access

    Article

    Electrical properties and crystallization behavior of Sb x Se100−x thin films

    The structural transformation and transformation kinetics of Sb x Se100−x films (60 ≤ x ≤ 70) were studied to investigate the feasibility of applying Sb ...

    M. J. Kang, T. J. Park, D. Wamwangi, K. Wang, C. Steimer… in Microsystem Technologies (2007)

  5. No Access

    Article

    Influence of do** upon the phase change characteristics of Ge2Sb2Te5

    The influence of do** upon the phase change characteristics of Ge2Sb2Te5 (GST) has been determined with a variety of techniques including four-point-probe electrical resistance measurements, grazing incidence X...

    K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, M. Wuttig… in Microsystem Technologies (2007)

  6. No Access

    Article

    Phase change materials: From material science to novel storage devices

    In recent years, non-volatile solid state memories have in many applications replaced magnetic hard disk drives. While the most popular and successful non-volatile memory is the “FLASH” random access memory, s...

    M. Wuttig, C. Steimer in Applied Physics A (2007)

  7. No Access

    Chapter

    From a Fundamental Understanding of Phase Change Materials to Optimization Rules for Nonvolatile Optical and Electronic Storage

    Phase change materials are commercially used in rewritable optical storage and investigated as non-volatile electronic storage. A short laser or current pulse of high intensity melts a sub-micron sized spot of...

    C. Steimer, Henning Dieker, Wojciech Welnic… in Advances in Solid State Physics (2008)