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  1. No Access

    Article

    Growth of epitaxial TiN (111) thin films with low resistivity on Si (111) by crossed-beam pulsed laser deposition

    Titanium nitride (TiN) thin films were grown epitaxially on Si (111) substrates by reactive pulsed laser deposition. Substrate temperatures ranged from 550 to 950 °C while plume kinetic energies ranged from 46...

    Sukill Kang, C. M. Rouleau in Journal of the Korean Physical Society (2017)

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    Article

    Pulsed laser CVD investigations of single-wall carbon nanotube growth dynamics

    The nucleation and rapid growth of single-wall carbon nanotubes (SWNTs) were explored by pulsed-laser assisted chemical vapor deposition (PLA-CVD). A special high-power, Nd:YAG laser system with tunable pulse ...

    Z. Liu, D. J. Styers-Barnett, A. A. Puretzky, C. M. Rouleau, D. Yuan… in Applied Physics A (2008)

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    Article

    Altering the catalytic activity of thin metal catalyst films for controlled growth of chemical vapor deposited vertically aligned carbon nanotube arrays

    The growth rate and terminal length of vertically aligned carbon nanotube arrays (VANTAs) grown by chemical vapor deposition have been dramatically improved through pulsed KrF excimer laser pretreatments of mu...

    C. M. Rouleau, G. Eres, H. Cui, H. M. Christen, A. A. Puretzky… in Applied Physics A (2008)

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    Article

    Cumulative and continuous laser vaporization synthesis of single wall carbon nanotubes and nanohorns

    The conditions for the scaled synthesis of single wall carbon nanotubes (SWNTs) and single wall carbon nanohorns (SWNHs) by laser vaporization at high temperatures are investigated and compared using in situ d...

    A. A. Puretzky, D. J. Styers-Barnett, C. M. Rouleau, H. Hu, B. Zhao… in Applied Physics A (2008)

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    Article

    Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation

    GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70–75 mTorr of m...

    C.M. Rouleau, S. Kang, D.H. Lowndes in Applied Physics A (1999)