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  1. No Access

    Article

    Low Pressure Omcvd Growth of GaAs on InP for Fet and Quantum Well Laser Fabrication

    Gallium arsenide epitaxial layers with excellent morphology have been grown by organometallic chemical vapor deposition (OMCVD) on (100) and 2-3° off (100) InP substrates by a modified two-step growth commonly...

    R. Bhat, Y-H. Lo, C. Caneau, C. J. Chang-Hasnain… in MRS Online Proceedings Library (1989)

  2. No Access

    Article

    Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C

    Elevated temperature (200° C) single- and multiple-energy Co implants inn-type InP, Co and Fe implants in n-type In0.53Ga0.47As, and Ti implants inp-type In0.53Ga0.47As were performed. For elevated temperature, s...

    Mulpuri V. Rao, Sadanand M. Gulwadi, Savitri Mulpuri… in Journal of Electronic Materials (1992)

  3. No Access

    Chapter

    Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates

    The excess carrier capture and stimulated emission processes in GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are discussed. These crescent shaped w...

    E. Kapon, M. Walther, D. M. Hwang, E. Colas… in Phonons in Semiconductor Nanostructures (1993)

  4. No Access

    Article

    Fe and Ti implants in In0.52Al0.48As

    Single (200 keV) and multiple energy Fe implants in n-type and Ti implants in p-type material were performed in In0.52Al0.48As at both room temperature and 200°C. For the Fe implants, the secondary ion mass spect...

    Jaime M. Martin, Ravi K. Nadella, Mulpuri V. Rao… in Journal of Electronic Materials (1993)

  5. No Access

    Article

    Optical Characterization of InGaAs/InP Quantum Wires and Dots

    High resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm a...

    S. Q. Gu, E. Reuter, Q. Xu, H. Chang, R. Panepucci… in MRS Online Proceedings Library (1993)

  6. No Access

    Article

    Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves

    Selective-area epitaxy was investigated by Cl-transport VPE growth of GaxIn1-xAs in features etched in a (001) InP wafer through windows of an SiO2 mask. Growth was conducted simultaneously on masked samples with...

    H. M. Cox, D. M. Hwang, M. R. Frei, C. Caneau… in MRS Online Proceedings Library (1993)

  7. No Access

    Article

    Effects of Reactive Ion Etching on Phonon-Electron Interactions in Inalas-Ingaas Modulation-Doped Field-Effect Transistor Structures Studied by Raman Scattering

    Raman Scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.52Al0.48As-In0.53Ga0.47As δ-doped heterostructures provides a powerful probe of electronic properties in th...

    J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala… in MRS Online Proceedings Library (1993)

  8. No Access

    Article

    Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure

    We report in this paper results from photoluminescence studies on InP/AlInAs/InP double heterostructure. We particuliary focus on the 1.26 eV recombination (also refered as the 1.3 eV transition) that originat...

    T. Benyattou, M.A. Garcia-Perez, S. Moneger, G. Guillot… in MRS Online Proceedings Library (1995)

  9. No Access

    Article

    OMVPE grown GalnAs: C for HBTs

    We have grown GaInAs:C by low pressure organometallic vapor phase epitaxy and observed that the hole concentration of such layers decreases upon growth of cap layers such as heterojunction bipolar transistor e...

    C. Caneau, R. Bhat, S. Goswami, M. A. Koza in Journal of Electronic Materials (1996)