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Article
Effective pulse recompression after nonlinear spectral broadening in picosecond Yb-doped fiber amplifier
We report the performance of a picosecond master-oscillator power amplifier (MOPA) system based on a diode-pumped solid-state (DPSS) seed laser and Yb-doped fiber amplifier. An average power of 28 W at ∼200 MH...
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Article
Robust diode-end-pumped Nd:GdVO4 laser passively mode-locked with saturable output coupler
Passively mode-locked diode-pumped solid-state (DPSS) Nd:GdVO4 laser by using a saturable output coupler (SOC) in stable two-mirror linear cavity design is demonstrated. The laser was pumped by low-power single l...
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Article
Using dual-mode self-locked semiconductor laser for optical millimeter-wave application
In this study, an optical millimeter-wave (mm-wave) generator is proposed and experimentally demonstrated by using a self-injected Fabry-Perot laser diode (FP-LD), having mode spacing of 1.11 nm, for dual-mode...
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Article
Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline silicon
We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond lase...
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Article
Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas
We investigate the characteristics of terahertz radiation pulses using biased multi-energy arsenic-ion-implanted and semi-insulating GaAs photoconductive antennas with different gap sizes in terahertz time-dom...
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Article
Optical Constants of Two Typical Liquid Crystals 5CB and PCH5 in the THz Frequency Range
The complex refractive indices of two benchmark nematic liquid crystal,4-4 ′-n-pentyl-cyanobiphenyl (5CB) and 4-(trans-4′pentylcyclohexyl)-benzonitrile (PCH5) have been determinedin the frequency range from 0.2 t...
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Article
Characterization of optically excited terahertz radiation from arsenic-ion-implanted GaAs
This work characterizes the optically excited terahertz (THz) radiation from arsenic-ion-implanted GaAs (GaAs:As+). We observed phase reversal in the emitted THz radiation field after the semi-insulating GaAs sub...
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Article
Ultrafast response of multi-energy proton-bombarded GaAs photoconductors
We have investigated the ultrafast optical and optoelectronic characteristics of multi-energy proton-bombarded GaAs (GaAs:H+) material and devices in some detail. Photo-excited carrier lifetimes of GaAs:H+ were o...