![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Effect of Poly-Si on Electromigration Behaviors and Microstructure Characteristics of Au Metallization
For BJT and MOSFET, poly-Si is the most critical layer used as an emitter to improve the current gain in BJT and as a gate to improve the gate oxide reliability in MOSFET. In both cases, the poly-Si is then co...
-
Article
Residual Stress and Lattice Distortion Map** of Patterned Devices Which Failed Electromigration Testing Using the Microbeam X-Ray Diffraction (MXRD) Technique
Spatially resolved residual stress and lattice distortion measurements have been made on experimental RF NPN devices which failed electromigration testing. The experimental devices underwent a steady state lon...
-
Article
Effects of Cu and Si Dopants On Electromigration Mass Transport in Al Interconnects for VLSI
We have investigated the effects of Cu and Si dopants on electromigration mass transport in Al interconnects for VLSI technology. Four Al alloys with different Cu and Si dopant concentrations (Al-1.5%Cu, Al-1....
-
Article
Effect of Annealing and Passivation on the Electromigration and Linewidth Dependence
Continued miniaturization of conductor geometry below 0.5μm has by a concomitant decrease in Al deposition temperature, typically below 300°C. The degree of reliability exhibited by these films is strongly dep...
-
Chapter and Conference Paper
Graphite Intercalated with Potassium and Ammonia—A Metal-Ammonia Solution in Two Dimensions
Several decades ago Rudöff and his coworkers [1] showed that graphite could be readily intercalated by metal-ammonia solutions (M-NH3 where M = alkali metals, rare earth metals, etc.) if the host material was dir...