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  1. No Access

    Article

    Deformation, residual stress, and constitutive relations for quenched W319 aluminum

    A study of the development of deformation and transient and residual stresses during quenching in aluminum alloy W319 is presented. Rapid tension tests were performed on W319 in the super-saturated solution st...

    M. L. Newman, B. J. Robinson, H. Sehitoglu… in Metallurgical and Materials Transactions A (2003)

  2. No Access

    Article

    An ultrafast all-optical asymmetric Fabry-Pérot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy

    We demonstrated ultrafast all-optical switching, using an asymmetric Fabry-Pérot device, based on bulk Be-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. We achieved 5 ps switching window (1/...

    Li Qian, P.W.E. Smith, B.J. Robinson, D.A. Thompson in Optical and Quantum Electronics (2001)

  3. No Access

    Article

    Interactions Between Np-Doped Synroc and Boom Clay

    Leaching experiments with deionised water at 70°C have been carried out to ascertain the effect of oxidising and anaerobic conditions and the presence of Boom clay on Np release from Synroc.

    K. P. Hart, B. J. Robinson, T. E. Payne, P. Van Iseghem… in MRS Online Proceedings Library (1994)

  4. No Access

    Article

    Characterization of InGaAs/InP Epitaxial Layers Grown Over V-Groove Patterned InP Substrates using Gas Source Molecular Beam Epitaxy

    Gas source molecular beam epitaxy has been used to deposit single InP layers, and multiple layers of InGaAs/InP over V-groove patterned (100) InP substrates. The V-grooves were defined by the (211)A and (111)B...

    N.J. Bulitka, A. Gupta, B.J. Robinson, D.A. Thompson… in MRS Online Proceedings Library (1993)

  5. No Access

    Article

    Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

    Single strained layer structures of up to 30 nm of Si1-xGex on (100) Si and capped with 30–36 nm of Si have been amorphized by implantation with 120 keV As+. The amorphized region, extending to a depth of 130 nm,...

    B.J. Robinson, B.T. Chilton, P. Ferret, D.A. Thompson in MRS Online Proceedings Library (1989)