Abstract
Gas source molecular beam epitaxy has been used to deposit single InP layers, and multiple layers of InGaAs/InP over V-groove patterned (100) InP substrates. The V-grooves were defined by the (211)A and (111)B family of crystal planes. Scanning electron microscopy, transmission electron microscopy, and scanning photoluminescence were used to characterize the variation in the composition and thickness of the epitaxial layers. Defect-free epitaxial layers were achieved within (211)A V-grooves; whereas, dislocations were observed in the InGaAs layers deposited within (111)B grooves. The dislocations are attributed to the large lattice mismatch caused by a variation in composition due to differential GroupIII diffusion on the groove sidewalls. Scanning photoluminescence indicates an In (100) diffusion length of 2.2–3.5µm.
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Acknowledgments
We would like to thank Waterloo Scientific Inc. for the use of their SPM-200 to perform the SPL measurements. This project was funded by the Ontario Centre for Materials Research and by the Natural Sciences and Engineering Research Council. We would also like to thank Scott McMaster for running the MBE machine.
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Bulitka, N., Gupta, A., Robinson, B. et al. Characterization of InGaAs/InP Epitaxial Layers Grown Over V-Groove Patterned InP Substrates using Gas Source Molecular Beam Epitaxy. MRS Online Proceedings Library 326, 39–44 (1993). https://doi.org/10.1557/PROC-326-39
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DOI: https://doi.org/10.1557/PROC-326-39