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Characterization of InGaAs/InP Epitaxial Layers Grown Over V-Groove Patterned InP Substrates using Gas Source Molecular Beam Epitaxy

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Abstract

Gas source molecular beam epitaxy has been used to deposit single InP layers, and multiple layers of InGaAs/InP over V-groove patterned (100) InP substrates. The V-grooves were defined by the (211)A and (111)B family of crystal planes. Scanning electron microscopy, transmission electron microscopy, and scanning photoluminescence were used to characterize the variation in the composition and thickness of the epitaxial layers. Defect-free epitaxial layers were achieved within (211)A V-grooves; whereas, dislocations were observed in the InGaAs layers deposited within (111)B grooves. The dislocations are attributed to the large lattice mismatch caused by a variation in composition due to differential GroupIII diffusion on the groove sidewalls. Scanning photoluminescence indicates an In (100) diffusion length of 2.2–3.5µm.

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References

  1. R. Bhat, Semicond. Sci. Technol. 8, 985, (1993).

    Google Scholar 

  2. S.H. Jones, L.K. Seidel, K.M. Lau, and M. Harold, J. Crystal Growth 108, 73, (1991).

    Article  CAS  Google Scholar 

  3. K. Kojima, K. Mitsunaga, and K. Kyuma, Appl. Phys. Lett. 56, 154, (1990).

    Article  CAS  Google Scholar 

  4. B. Garret and E.J. Thrush, J. Crystal Growth 97, 273, (1989).

    Article  Google Scholar 

  5. N.J. Bulitka, M.Eng. thesis, McMaster University, 1993.

    Google Scholar 

  6. E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, and D. Bimberg, Superlattices and Microstructures 12, 491, (1992).

    Article  CAS  Google Scholar 

  7. Y.D. Galeuchet, P. Roentgen, and V. Graf 53, 2638, (1988).

    CAS  Google Scholar 

  8. M. Henini, III-Vs Review 6, 50, (1993).

    Article  Google Scholar 

  9. E. Kapon, D.M. Hwang, and R. Bhat, Phys. Rev. Lett. 63, 430, (1989).

    Article  CAS  Google Scholar 

  10. E. Corcoran, Scientific American 11, 122, (1990).

    Article  Google Scholar 

  11. D.T. Huo, J.D. Wynn, S.G. Napholtz, and D.P. Wilt, J. Electrochem. Soc. 135, 1231, (1988).

    Article  CAS  Google Scholar 

  12. W.C. Dautremont-Smith, W.P. Wilt, International Patent No. WO86/01367 (13 Mar. 1986).

    Google Scholar 

  13. H.Q. Huo and C.W. Tu, Appl. Phys. Lett. 63, 280, (1993).

    Google Scholar 

  14. M.A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundementals and Current Status, (Springer-Verlag, New York, 1989), p. 229.

    Book  Google Scholar 

  15. R. Bhat, E. Kapon, J. Werner, D.M. Hwang, and N.G. Stoffel, and M.A. Koza, Appl. Phys Lett. 56, 863, (1990).

    Article  CAS  Google Scholar 

  16. R. Bhat, E. Kapon, S. Simphony, E. Kolas, D.M. Hwang, N.G. Stoffel, and M.A. Koza, J. Crystal Growth 107, 716, (1991).

    Article  CAS  Google Scholar 

  17. I.C. Bassignana, C.J. Miner, and N. Puetz, J. Appl. Phys. 65, 4299, (1989).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

We would like to thank Waterloo Scientific Inc. for the use of their SPM-200 to perform the SPL measurements. This project was funded by the Ontario Centre for Materials Research and by the Natural Sciences and Engineering Research Council. We would also like to thank Scott McMaster for running the MBE machine.

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Bulitka, N., Gupta, A., Robinson, B. et al. Characterization of InGaAs/InP Epitaxial Layers Grown Over V-Groove Patterned InP Substrates using Gas Source Molecular Beam Epitaxy. MRS Online Proceedings Library 326, 39–44 (1993). https://doi.org/10.1557/PROC-326-39

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  • DOI: https://doi.org/10.1557/PROC-326-39

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