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Article
In situ ellipsometric study of a palladium catalyst during the oxidation of methane
Ellipsometry is used to follow the growth of a PdO layer on the surface of a thick Pd-film catalyst during methane oxidation at ∼ 500°C. The oxide layer that develops under rich conditions (excess CH4) is quite p...
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Article
Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets
Silicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000°C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the...
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Article
Ellipsometric study of a palladium catalyst during the oxidation of carbon monoxide and methane
Spectroscopic ellipsometry is used to monitor the surface of a thick Pd‐film catalyst during the oxidation of either carbon monoxide or methane. Dense PdO layers form under sufficiently lean conditions (excess...