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    Ellipsometric study of a palladium catalyst during the oxidation of carbon monoxide and methane

    Spectroscopic ellipsometry is used to monitor the surface of a thick Pd‐film catalyst during the oxidation of either carbon monoxide or methane. Dense PdO layers form under sufficiently lean conditions (excess...

    G.W. Graham, D. König, B.D. Poindexter, J.T. Remillard, W.H. Weber in Topics in Catalysis (1999)

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    Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets

    Silicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000°C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the...

    L. Rimai, R. Ager, W. H. Weber, J. Hangas in MRS Online Proceedings Library (1994)

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    In situ ellipsometric study of a palladium catalyst during the oxidation of methane

    Ellipsometry is used to follow the growth of a PdO layer on the surface of a thick Pd-film catalyst during methane oxidation at ∼ 500°C. The oxide layer that develops under rich conditions (excess CH4) is quite p...

    D. König, W. H. Weber, B. D. Poindexter, J. R. McBride, G. W. Graham in Catalysis Letters (1994)