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Article
Stress relaxation behavior and low cycle fatigue behavior of bulk SAC 305
Bulk Sn96.5Ag3Cu0.5 samples were mechanically tested to investigate the effect of temperature, frequency and applied stress on the low cycle fatigue and stress relaxation behavior and the corresponding microstruc...
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Article
Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits
A refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diff...
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Article
TiNi/GaAs Thin Film Structures for Gate Metallizations
Shape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi...
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Article
Materials Education for the 21ST Century Workforce a Report on the 18th Biennial Conference on National Materials Policy, Washington D.C.
This article presents a summary report of the 18th biennial conference on National Materials Policy, held May 24- 25, 2004 at National Academies Keck Center, Washington DC. This conference addressed the education...
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Article
High Gain, Low Threshold Current GaInAsP Based Vcsels for Operation at 1.24UM
An electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external e...
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Article
Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO2 Gate Dielectric
Ti/Ni/Au/diamond metal-insulator-semiconductor field effect transistors with TiO2 gate dielectric have been successfully fabricated. In this work, multi-layer metallization on the semiconducting diamond surface w...
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Article
Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850nm
Based on the AlxGa1-xAs/GaAs system and with graded Distributed Bragg mirrors (DBRs), a VCSEL for operation at 850–860nm is reported. The graded transition bands inside the DBRs were designed in order to achieve ...
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Article
Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser
Short-wavelength vertical cavity surface emitting lasers (VCSELS) are typically important for high-density optical memory and optical imaging systems. An AlGaN/GaN multiquantum well (MQW) VCSEL was designed fo...
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Chapter
Materials and Reliability Issues in MEMS and Microsystems
The recent evolution in microelectronics of combining electrical and mechanical functions has brought about an exciting new field — microelectromechanical system (MEMS) [1, 2]. Miniature structures developed by n...
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Article
Mechanical Deformation Modeling of Diamond/GaAs Structures
In this study a finite strain elastic-plastic finite element analysis is performed on diamond/GaAs structures. A series of models based upon the principal of superposition are proposed to investigate the mecha...
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Article
Diffusion Barrier Reliability with Respect to the Role of Tin Stoichiometry Between Al Metallization and Si Substrate
In this study, the relation between interdiffusion in Al/ TiN thin film couples and diffusion barrier stability has been investigated. The TiN diffusion barrier was deposited by reactive sputtering in an Ar-N2 ga...
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Article
Interfacial Delamination in Plastic Encapsulated Integrated Circuits (PICs)
The reliability of plastic packaged integrated circuits was assessed from the point of view of interfacial mechanical integrity. It is shown that the effect of structural weaknesses caused by poor bonding, voi...
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Chapter
Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology
Rapid Thermal Processing (RTP) in the Compound Semiconductor technology has had a significant impact in making such a technology reliable and manufactureable. Since 1980 [1] RTP has been applied to achieving c...
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Article
Simulation of Thermal Stresses, Voids and Fracture at the GaAs/Ceramic Interface
Stresses induced at the GaAs-Al2O3 interface by large ΔT excursions have been investigated by finite element simulation and have been correlated with experimental results. The effects of power and temperature cyc...
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Article
Diamond Heat Sinks for High Temperature Electronics: Simulation, and Thermal Analysis
A numerical investigation has been conducted in order to demonstrate the potential thermal performance that can be achieved by utilizing a diamond heat - sink design which minimizes junction - to - case therma...
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Article
Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments
The thermal stability of W/Si multilayers (MLs) has been simulated up to 1000°C and 8 hour anneals. The simulation has been carried out with and without the presence of Au overlayers. The results are compared ...
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Article
Die Attach Adhesion and Void Formation at the Gaas Substrate Interface
A model is constructed to consider the stresses (analytically and with Finite Element Analysis (MiA)) which result from the thermal mismatch between the die and the substrate. FHA is used to simulate thermal s...
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Chapter
Morphology and Transport Properties of Nanophases in Semiconductor Multilayer Films
Spinodal decomposition of (001) In0.53 Ga0.47As films along with <110> direction has been reported for the first time. The substrate for the MBE growths is shown to be critical for the composition modulations. Th...
