Skip to main content

16 Result(s)

within Andreia Cathelin Remove this filter

and

  1. Book Series

    Integrated Circuits and Systems

    Volume 0 / 2010 to Volume 68 / 2014

  2. No Access

    Book

    The Fourth Terminal

    Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems

    Sylvain Clerc, Thierry Di Gilio, Andreia Cathelin in Integrated Circuits and Systems (2020)

  3. No Access

    Chapter

    Body-Biasing in FD-SOI for Analog, RF, and Millimeter-Wave Designs

    This chapter introduces the usage of body-bias for analog designs. The benefits of bias tuning knob are first introduced for signal path or trimming elements. From device cross-section, the demonstration of th...

    Andreia Cathelin in The Fourth Terminal (2020)

  4. No Access

    Chapter

    Coarse/Fine Delay Element Design in 28 nm FD-SOI

    This chapter starts by highlighting the requirements and existing techniques in producing digital delay, summarizing the state of the art. Subsequently, a topology assessment is presented based on specified pe...

    Ilias Sourikopoulos, Andreia Cathelin, Andreas Kaiser… in The Fourth Terminal (2020)

  5. No Access

    Chapter

    Introduction

    The CMOS integration race has reached limitations for planar silicon process starting from the 40 nm node. The transistor channel was more and more difficult to control and specific process integration methods...

    Andreia Cathelin, Sylvain Clerc in The Fourth Terminal (2020)

  6. No Access

    Chapter

    Body-Bias Calibration Based Temperature Sensor

    Temperature monitoring is critical to the operation of all SoCs, as it provides information to adjust logic timing, optimize power management, or calibrate analog circuits. The temperature information should b...

    Martin Cochet, Ben Keller, Sylvain Clerc, Fady Abouzeid… in The Fourth Terminal (2020)

  7. No Access

    Chapter

    Millimeter-Wave Power Amplifiers for 5G Applications in 28 nm FD-SOI Technology

    In this chapter, a 31 GHz reconfigurable balanced 2-stage power amplifier (PA) integrated in 28 nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain wide range power gain control...

    Florent Torres, Andreia Cathelin, Eric Kerhervé in The Fourth Terminal (2020)

  8. No Access

    Chapter

    Millimeter-Wave Distributed Oscillators in 28 nm FD-SOI Technology

    This chapter presents mm-wave distributed oscillators (DOs) design running at 134 and 200 GHz, in 28 nm FD-SOI technology. First, the DO theory for operation close to transistor’s f T is detailed and then the des...

    Raphaël Guillaume, Andreia Cathelin, Yann Deval in The Fourth Terminal (2020)

  9. No Access

    Chapter

    System Integration of RISC-V Processors with FD-SOI

    Improving the energy efficiency of processor systems-on-chip (SoCs) is key to improving their performance and utility. The FD-SOI silicon process enables integrated systems that can deliver dramatic improvemen...

    Ben Keller, Borivoje Nikolić, Brian Zimmer, Martin Cochet… in The Fourth Terminal (2020)

  10. No Access

    Chapter and Conference Paper

    Capacitive Body-Coupled Communication in the 400–500 MHz Frequency Band

    One approach to enable wireless communication between body-worn nodes is to use capacitive body-coupled communication (C-BCC). This technique, which uses capacitive electrodes as transducing elements, has prev...

    Robin Benarrouch, Arno Thielens… in Body Area Networks: Smart IoT and Big Dat… (2019)

  11. No Access

    Chapter

    FDSOI Technology, Advantages for Analog/RF and Mixed-Signal Designs

    Fully depleted silicon on insulator (FDSOI) is one of the technology alternatives that permits today to follow CMOS More Moore law for the 28 nm node and beyond, while still dealing with fully planar transisto...

    Andreia Cathelin in Hybrid ADCs, Smart Sensors for the IoT, an… (2018)

  12. No Access

    Chapter

    Tunable BAW Filters

    Most current radio receivers use SAW bandpass filters for band selection. Their center frequency depends on the dimensions of the interdigital structure. Therefore, in the next few years, SAW technology will f...

    Stéphane Razafimandimby, Cyrille Tilhac… in MEMS-based Circuits and Systems for Wirele… (2013)

  13. No Access

    Article

    SMR–BAW duplexer for W-CDMA application

    This paper presents the design of a novel antenna duplexer based on a mixed ladder lattice topology using advanced Solidly Mounted Resonator–Bulk Acoustic Wave (SMR–BAW) and Integrated Passive Device (IPD) tec...

    Eric Kerhervé, Jean-Baptiste David… in Analog Integrated Circuits and Signal Proc… (2010)

  14. No Access

    Chapter

    BAW-IC CO-Integration Tunable Filters at GHz Frequencies

    This paper presents a particular type of GHz frequencies high-quality Silicon integrated filters using BAW resonators. By enhancing BAW resonators with active Silicon “intelligence”, process and temperature va...

    Andreia Cathelin, Stéphane Razafimandimby, Andreas Kaiser in Analog Circuit Design (2010)

  15. No Access

    Chapter

    Silicon Technologies to Address mm-Wave Solutions

    There are strong reasons not to consider silicon technologies for mm-wave applications. Silicon comes up short in many comparisons to III-V semiconductors. Silicon carrier mobility is relatively low and so dev...

    Andreia Cathelin, John J. Pekarik in mm-Wave Silicon Technology (2008)

  16. No Access

    Article

    A novel architecture of a tunable bandpass BAW-filter for a WCDMA transceiver

    This paper presents an integrated tunable filter using Bulk Acoustic Wave (BAW) resonators, designed and fabricated in a 0.25 μm BiCMOS process. This filter is intended to be used in a zero-IF W-CDMA receiver ...

    Stéphane Razafimandimby, Cyrille Tilhac… in Analog Integrated Circuits and Signal Proc… (2006)