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    Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

    Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron em...

    Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen… in MRS Online Proceedings Library (2010)