37 Result(s)
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Article
Low-Frequency Microwave Response of a Quantum Point Contact
The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time...
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Article
Photon-Stimulated Transport in a Quantum Point Contact (Brief Review)
Studies of photon-stimulated transport through a quantum point contact based on a high-mobility two-dimensional electron gas in a GaAs quantum well are reviewed. This review includes a brief historical introdu...
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Article
Modulation of Magneto-Intersubband Oscillations in a One-Dimensional Lateral Superlattice
Low-temperature magnetotransport in a quasi-two-dimensional electron system based on a selectively doped GaAs quantum well with two occupied quantum-confinement subbands with one-dimensional periodic modulatio...
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Article
Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them
The process of local anodic oxidation of thin GeO films has been studied using an atomic force microscope. The electron-probe microanalysis showed that oxidized areas of a GeO film were germanium dioxide. The ...
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Article
AlInAs quantum dots
A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considera...
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Article
Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry
The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refr...
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Article
Microwave response of a ballistic quantum dot
The microwave response (photovoltage and photoconductance) of a lateral ballistic quantum dot made of a high-mobility two-dimensional electron gas in an AlGaAs/GaAs heterojunction has been studied experimental...
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Article
Fine structure of the exciton states in InAs quantum dots
The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has...
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Article
Preparation of thin films of platinum group metals by pulsed MOCVD. II. Deposition of Ru layers
In situ high-temperature mass spectrometry is used to analyze the thermal decomposition of Ru(acac)3 and Ru(nbd)(allyl)2 vapor and possible schemes of thermal transformations on the heated surfac...
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Article
Preparation of thin films of platinum group metals by pulsed MOCVD. I. Deposition of Ir layers
Pulsed MOCVD with the in situ mass spectrometric control of the deposition process is employed to obtain ultrathin Ir layers with a thickness from units to tens of nanometers. The role of the reaction medium, pre...
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Article
Features of the structure and properties of β-FeSi2 nanofilms and a β-FeSi2/Si interface
The electronic, geometric, and magnetic structure of nanofilms of the β phase of iron disilicide FeSi2 with the (001), (100), and (010) surfaces have been simulated through density functional calculations. A subs...
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Article
Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets
GaAs/AlAs superlattices grown on a nanofaceted (311)A surface are studied by atomic-force microscopy and Raman scattering spectroscopy. The spectra of backscattered light in the direction perpendicular to the ...
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Article
Erratum to: “Surface enhanced Raman scattering of light by ZnO nanostructures”
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Article
Surface enhanced Raman scattering of light by ZnO nanostructures
Raman scattering (including nonresonant, resonant, and surface enhanced scattering) of light by optical and surface phonons of ZnO nanocrystals and nanorods has been investigated. It has been found that the no...
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Article
Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface
The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses has been studied by scanning tunneling microscopy. The rounded shape of islands obtain...
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Article
Spontaneous composition modulation during Cd x Hg1−x Te(301) molecular beam epitaxy
The spontaneous composition modulation of a solid solution in Cd x Hg1−x Te during molecular beam epitaxy at CdTe/ZnTe/GaAs(301) substrates has been disco...
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Article
Drift of adatoms on the (111) silicon surface under electromigration conditions
The existence of the drift of adatoms on the surface that is induced by an electric current heating a sample under the conditions of sublimation, homoepitaxial growth, and quasiequilibrium on the (111) silicon...
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Article
Formation of Ge clusters at a Si(111)-Bi- \(\sqrt 3 \times \sqrt 3\) surface
The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been ...
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Article
Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation
Femtosecond laser treatments (second harmonic of Ti-sapphire laser, λ ≈ 400 nm wavelength, <30 fs pulse duration) were applied for crystallization of thin hydrogenated amorphous silicon films on glass substrat...
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Article
Two-dimensional electron gas in a lattice of antidots with a period of 80 nm
The magnetotransport in a two-dimensional electron gas with a lattice of antidots, which has a record-breaking small (80 nm) period and size (20–40 nm) of antidots comparable with the de Broglie wavelength of ...
