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  1. Article

    Open Access

    Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800–1100 °C of 30–150 nm Ge layers deposited on Si(100) at 400–500 °C. It is fo...

    A. A. Shklyaev, A. V. Latyshev in Nanoscale Research Letters (2016)

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  2. No Access

    Article

    Luminescence in GeO x films containing germanium nanoclusters

    Metastable GeO x films have been deposited onto a Si substrate by the electron beam evaporation of GeO2 powder in high vacuum. The optical properties of Ge nanoclusters in GeO ...

    K. N. Astankova, E. B. Gorokhov, V. A. Volodin, D. V. Marin… in Nanotechnologies in Russia (2016)

  3. No Access

    Article

    High-precision nanoscale length measurement

    Modern lithographical methods used to create linear measures for nanometer-range dimensions and the main factors which limit the applications of such gages have been analyzed in the paper. Prospects for develo...

    D. V. Sheglov, S. S. Kosolobov, L. I. Fedina, E. E. Rodyakina… in Nanotechnologies in Russia (2013)

  4. No Access

    Chapter

    Step Bunching on Silicon Surface Under Electromigration

    In situ ultra high vacuum reflection electron microscopy studies of structural and morphological transformations of silicon surface at condition of sample heating by direct electric current are reviewed. The k...

    S.S. Kosolobov, A.V. Latyshev in Nanophenomena at Surfaces (2011)

  5. No Access

    Article

    Introscopy of quantum nanoelectronic devices

    Semiconductor nanoelectronic quantum devices are one of the achievements of contemporary physics and laboratory nanotechnologies. Short thin current channels are formed by electric fields in the plane of the t...

    O. A. Tkachenko, V. A. Tkachenko, Z. D. Kvon, A. V. Latyshev… in Nanotechnologies in Russia (2010)

  6. No Access

    Article

    Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

    The possibility of forming the Ge-based wires with the nanoscale’s lateral resolution using the local modification of GeO(sol) films by a scanning probe microscope was demonstrated for the first time. The propert...

    K. N. Astankova, D. V. Sheglov… in Journal of Surface Investigation. X-ray, S… (2009)

  7. No Access

    Article

    Diagnostics and lithography of semiconductor structures for nanoelectronics

    A complex of metrological, diagnostic, and technological support of investigations and innovations in the field of nanotechnologies based on the Nanostructures joint service center is presented. Results of the...

    A. V. Latyshev in Nanotechnologies in Russia (2008)

  8. No Access

    Article

    Passage of alternating current through the interface of crystallites

    The problem of flowing of alternating current through a planar interface between two crystallites of a polycrystalline metal is solved analytically. The coefficient of transmission of electrons through the int...

    A. V. Latyshev, A. A. Yushkanov in The Physics of Metals and Metallography (2008)

  9. No Access

    Article

    Factors determining the morphology of Cd x Hg1−x Te films in the course of molecular beam epitaxy

    Using atomic force microscopy, the dependence of the micromorphology of CdHgTe(301) films grown by molecular beam epitaxy on growth conditions and micromorphology of the buffer CdTe layer is studied. Transmiss...

    I. V. Sabinina, A. K. Gutakovskii… in Journal of Surface Investigation. X-ray, S… (2008)

  10. No Access

    Article

    Current flowing through a boundary between crystallites at arbitrary coefficients of transmission and specular reflection

    The problem of the electrical resistance of a flat interface between two crystallites of a polycrystalline metal has been solved for the case where the coefficient of electron transmission through a nonscatter...

    A. V. Latyshev, A. A. Yushkanov in The Physics of Metals and Metallography (2007)

  11. No Access

    Chapter and Conference Paper

    On the mechanism of {113}-defect formation in Si

    The initial stage of {113} defect formation includes self-ordering of <10>-split interstitial-vacancy (IV) pairs in the <332> directions within doubled nearest neighbour atomic chains in {113} planes accompani...

    L I Fedina, S A Song, A L Chuvilin… in Microscopy of Semiconducting Materials (2005)