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Chapter
Hot Electron Light Emitting Semiconductor Heterojunction Devices (Hellish) — Type — 1 and Type — 2
One of the draw-backs of the conventional light emitters appears to be that the light emission is confined to a small region of the facets of the devices1. Thus, the compatibility in generic integration technolog...
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Chapter
Hot Electron Light Emission from Gunn Domains in Longitudinally Biased GaAs p — n Junctions and in n- GaAs Epilayers
Hot carrier Light emission from GaAs, biased in the Negative Differential Resistance region has been observed since the mid-sixties.1. Most earlier devices investigated were of dimensions in the 1 mm range. With ...
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Chapter
High Frequency DC Induced Oscillations in 2D
In recent years DC induced current oscillations have been observed in many different types of 2d structures. In this paper we present results on GaAs/AlGaAs MQW structures that exhibit this behaviour at low te...
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Chapter
Negative Differential Resistance, High Field Domains and Microwave Emission in GaAs Multi-Quantum Wells
Experimental results presented in this work are concerned with high longitudinal electric field transport in n-type modulation doped GaAs/AlGaAs multiple quantum wells. Negative differential resistance with accom...
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Chapter
NDR, Hot Electron Instabilities and Light Emission in LDS
It is well known that negative differential resistance, NDR, in bulk material can occur as a result of mixed scattering1,2, non-parabolicity2,3, intervalley transfer4,5, impurity barrier capture6,7 and other esot...