16 Result(s)
within
A. S. Yaroshevich
Physics
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Article
Determination of the roughness of heteroboundaries from photocurrent spectra of short-period AlAs/GaAs superlattices
Photocurrent spectroscopy is used to study the nature of the roughness of heteroboundaries in (AlAs)m/(GaAs)n short-period superlattices (m=3−5, n=10−13) grown by molecularbeam epitaxy. The formation of minibands...
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Article
Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field
The photocurrent was measured as a function of the external electric field in short-period AlAs/GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon...
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Article
Transformation of quantum size levels into virtual levels at the boundary between p-GaAs and an AlAs/GaAs superlattice
The transformation of quantum size levels into virtual levels upon a change in the electric field in an AlAs/GaAs superlattice located in the i region of a p-i-n structure is studied experimentally and theoretica...
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Article
Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers
The results of experimental and theoretical investigations directed toward the development of highly efficient sources of spin-polarized electrons are reported. The sources are based on heteroepitaxial elastic...
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Article
Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity
Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of p-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that...
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Article
Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity
The changes in the chemical composition, atomic structure, and electronic properties of the p-GaN(0001) surface upon chemical treatment in an HCl-isopropanol solution and vacuum annealing are investigated by x-ra...
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Article
Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin
Conditions necessary for the formation of a Fe/GaAs interface have been established and the electrical, magnetic, and optical properties of Pd/Fe/GaAs heterostructures with InGaAs quantum wells have been studi...
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Article
Fine structure of the exciton states in InAs quantum dots
The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has...
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Article
Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime
The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrali...
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Article
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Four...
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Article
Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range
Strained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there ...
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Article
Photon-Assisted Electron Transmission through a Quantum Point Contact
The theory of coherent photon-assisted electron transmission through a one-dimensional smooth barrier is successfully used to model the results of measuring the terahertz photoconductivity of a tunneling point...
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Article
Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two me...
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Article
Photo- and Thermoelectric Phenomena in Two-Dimensional Topological Insulators and Semimetals Based on HgTe Quantum Wells (Scientific Summary)
Experimental studies of photo- and thermoelectric phenomena in two-dimensional topological insulators and semimetals based on HgTe quantum wells have been briefly reviewed.
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Article
Photon-Stimulated Transport in a Quantum Point Contact (Brief Review)
Studies of photon-stimulated transport through a quantum point contact based on a high-mobility two-dimensional electron gas in a GaAs quantum well are reviewed. This review includes a brief historical introdu...
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Article
Low-Frequency Microwave Response of a Quantum Point Contact
The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time...
