Abstract
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Fourier spectrometer are compared with data on the film composition determined by X-ray microanalysis. The established nonmonotonic temperature dependence of the long-wavelength sensitivity limit is attributed to the combination of the temperature dependence of the PbSnTe band gap and the Burstein–Moss effect making the largest contribution to low-temperature measurements due to the long lifetime of excess charge carriers. It is shown that the difference between the band-gap values determined from the measured composition and temperature dependences of the long-wavelength sensitivity limit can be related to the inhomogeneity of the composition of the films grown by molecular beam epitaxy.
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Original Russian Text © A.N. Akimov, A.E. Klimov, N.S. Paschin, A.S. Yaroshevich, M.L. Savchenko, V.S. Epov, E.V. Fedosenko, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1574–1578.
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Akimov, A.N., Klimov, A.E., Paschin, N.S. et al. Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition. Semiconductors 51, 1522–1526 (2017). https://doi.org/10.1134/S1063782617110033
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DOI: https://doi.org/10.1134/S1063782617110033