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  1. No Access

    Article

    High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-gr...

    K. S. Zhuravlev, A. M. Gilinsky, I. B. Chistokhin, N. A. Valisheva… in Technical Physics (2021)

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    Article

    High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

    Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes wit...

    A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev… in Technical Physics Letters (2019)

  3. Article

    Silicon photodiode with a grid p-n junction

    V. I. Blynskii, Y. G. Vasileuskii, S. A. Malyshev, A. L. Chizh in Semiconductors (2007)

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    Article

    Silicon photodiode with a grid p-n junction

    Silicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of the cell sizes and diffusion length of minority carr...

    V. I. Blynskii, Yu. G. Vasileuskii, S. A. Malyshev, A. L. Chizh in Semiconductors (2007)

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    Article

    Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes

    A stationary physical model of the p-i-n photodiode based on a two-dimensional drift-diffusion scheme of charge transport in multilayer InxGa1-x AsyP1-y /InP heterostructures is de...

    S. A. Malyshev, A. L. Chizh, Yu. G. Vasileuski in Semiconductors (2006)