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Article
High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-gr...
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Article
High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes wit...
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Article
Silicon photodiode with a grid p-n junction
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Article
Silicon photodiode with a grid p-n junction
Silicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of the cell sizes and diffusion length of minority carr...
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Article
Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes
A stationary physical model of the p-i-n photodiode based on a two-dimensional drift-diffusion scheme of charge transport in multilayer InxGa1-x AsyP1-y /InP heterostructures is de...