Skip to main content

5 Result(s)

within A. I. Lihachev Remove this filter

and

  1. No Access

    Article

    Replacing Tunnel Junctions in InP with Conduction Channels with GaP Crystallites

    The results of investigations by the method of Electron beam-induced current of p–n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crys...

    A. E. Marichev, V. S. Epoletov, A. S. Vlasov, B. V. Pushnyi… in Technical Physics Letters (2023)

  2. No Access

    Article

    Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties

    Structures with Ge/Si nanoparticles (quantum dots) in an aluminum-oxide matrix are of interest due to the combination of two basic semiconductors and the use of a matrix with a high permittivity and strong oxy...

    O. M. Sreseli, N. A. Bert, V. N. Nevedomskii, A. I. Lihachev… in Semiconductors (2020)

  3. No Access

    Article

    Determination of the Thicknesses and Visualization of Ion-Exchange Waveguides in Glasses by Scanning Electron Microscopy

    The formation of a surface layer with silver and sodium concentration gradients in K8-grade glasses as a result of ion exchange is demonstrated by scanning electron microscopy (SEM) and electron probe X-ray mi...

    A. I. Lihachev, A. V. Nashchekin, R. V. Sokolov, S. G. Konnikov in Technical Physics (2019)

  4. No Access

    Article

    Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence

    The fundamental aspects of the electrochemical etching of lightly doped n-Si under backside illumination conditions are studied in a solution with a low HF concentration and a high concentration of hydrogen perox...

    G. V. Li, E. V. Astrova, A. I. Lihachev in Semiconductors (2019)

  5. No Access

    Article

    Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode

    The electrochemical etching of n-Si (100) in an electrolyte composed of 4% HF solution in 30% hydrogen peroxide is experimentally studied at a voltage exceeding the breakdown voltage. The effect of the illuminanc...

    G. V. Li, E. V. Astrova, A. I. Lihachev in Semiconductors (2018)