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Comparative Study of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

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    Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

    Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown usi...

    B. Beaumont, M. Vaille, G. Nataf, A. Bouillé… in MRS Internet Journal of Nitride Semiconduc… (1998)

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