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    Article

    Excited State Electronic Interactions in Oligothiophenes with Novel Supramolecular Structure

    Molecular beam deposition of quaterthiophene oligomer on a single crystal of potassium acid phtalate yields thin films exhibiting a novel supramolecular organisation which has been determined by a combined stu...

    R. Tubino, A. Borghesi, A. Sassella, C. Botta, W. Porzio in MRS Online Proceedings Library (2000)

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    Article

    Near-Field Optical Imaging of Electromigration Damages in Passivated Metal Stripes

    Electromigration is one of the main failure mechanisms limiting the miniaturization of microelectronic devices. As a consequence of the high current densities in the interconnections, hillocks and voids are fo...

    E. Bonera, A. Borghesi, C. Caprile in MRS Online Proceedings Library (1999)

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    Article

    Photoinduced Absorption Spectroscopy of Poly-3-Alkylthiophenes

    We report a study of the near infrared photoinduced absorption of a series of poly -3-decylthiophene with different supermolecular organization as solution cast films, good solvent and aggregated bad solvent s...

    C. Botta, S. Luzzati, A. Bolognesi, R. Tubino in MRS Online Proceedings Library (1992)

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    Article

    Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

    The transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation ...

    R. Reitano, M. G. Grimaldi, P. Baeri, E. Bellandi in MRS Online Proceedings Library (1991)

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    Article

    Ab-Initio Calculations on PPS Oligomers

    Ab-initio STO-3G* geometry optimizations have been carried out on the first two oligomers of poly (p-phenylene sulfide) (PPS), namely diphenyl sulfide (I) (neutral species, radical cation and dication) and 1, ...

    G.F. Musso, P. Piaggio, C. Cuniberti, G. Dellepiane in MRS Online Proceedings Library (1990)

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    Oxygen and Iron Redistribution upon Thermal Treatment in Iron Implanted Silicon

    In order to study the iron-oxygen interaction and their redistribution in silicon, different doses of 100 keV iron ions have been implanted into CZ silicon substrates, and subsequently annealed. The redistribu...

    B. Pivac, A. Borghesi, L. Ottolini, M. Geddo, A. Piaggi in MRS Online Proceedings Library (1989)

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    Article

    Solid Solutions of AB2C4 Defect Semiconductors

    AB2C4 defect semiconductors can be thought of as generalized zincblende compounds, in which the presence of two different cations and of vacant sites favours the formation of several crystalline phases. In this w...

    T. M. de Pascale, M. Marinelli, F. Meloni, G. Mula in MRS Online Proceedings Library (1988)