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  1. No Access

    Article

    Excited State Electronic Interactions in Oligothiophenes with Novel Supramolecular Structure

    Molecular beam deposition of quaterthiophene oligomer on a single crystal of potassium acid phtalate yields thin films exhibiting a novel supramolecular organisation which has been determined by a combined stu...

    R. Tubino, A. Borghesi, A. Sassella, C. Botta, W. Porzio… in MRS Online Proceedings Library (2000)

  2. No Access

    Article

    Near-Field Optical Imaging of Electromigration Damages in Passivated Metal Stripes

    Electromigration is one of the main failure mechanisms limiting the miniaturization of microelectronic devices. As a consequence of the high current densities in the interconnections, hillocks and voids are fo...

    E. Bonera, A. Borghesi, C. Caprile in MRS Online Proceedings Library (1999)

  3. No Access

    Chapter and Conference Paper

    Infrared Study of Oxygen Segregation at Structural Defects in Polycrystalline Silicon

    We have studied oxygen- and carbon-doped multicrystalline silicon samples. It was shown that a significant part of the oxygen incorporated into the samples was accumulated at extended structural defects and th...

    B. Pivac, A. Sassella, A. Borghesi in Progress in Fourier Transform Spectroscopy (1997)

  4. No Access

    Article

    Influence of carbon on platinum diffusion in silicon

    B. Pivac, T. Tadic, M. Jakšić, A. Borghesi in Journal of Materials Science Letters (1994)

  5. No Access

    Article

    Photoinduced Absorption Spectroscopy of Poly-3-Alkylthiophenes

    We report a study of the near infrared photoinduced absorption of a series of poly -3-decylthiophene with different supermolecular organization as solution cast films, good solvent and aggregated bad solvent s...

    C. Botta, S. Luzzati, A. Bolognesi, R. Tubino… in MRS Online Proceedings Library (1992)

  6. No Access

    Article

    Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

    The transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation ...

    R. Reitano, M. G. Grimaldi, P. Baeri, E. Bellandi… in MRS Online Proceedings Library (1991)

  7. No Access

    Article

    Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples

    Several techniques were used to study a surface layer structure of edge-defined film-fed grown polycrystalline silicon samples grown in CO gas deliberately added to the purging atmosphere. Although infrared an...

    B. Pivac, A. Borghesi, R. Canteri, M. Anderle in Journal of Materials Science (1991)

  8. No Access

    Article

    A comparative evaluation of spin-on-glass cure by FTIR technique

    Planarization techniques requires a deeper understanding of spin-on-glass (SOG) material behaviour. Besides chemical properties, the cure processes are becoming more and more relevant to achieve a positive imp...

    F. Gualandris, L. Masini, A. Borghesi in Journal of Electronic Materials (1991)

  9. No Access

    Article

    Carbon concentration variation in polycrystalline silicon wafers

    B. Pivac, A. Borghesi in Journal of Materials Science Letters (1991)

  10. No Access

    Article

    Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples

    Several techniques were used to study a surface layer structure of edge-defined film-fed grown polycrystalline silicon samples grown in CO gas deliberately added to the purging atmosphere. Although infrared an...

    B. Pivac, A. Borghesi, R. Canteri, M. Anderle in Journal of Materials Science (1991)

  11. No Access

    Article

    Ab-Initio Calculations on PPS Oligomers

    Ab-initio STO-3G* geometry optimizations have been carried out on the first two oligomers of poly (p-phenylene sulfide) (PPS), namely diphenyl sulfide (I) (neutral species, radical cation and dication) and 1, ...

    G.F. Musso, P. Piaggio, C. Cuniberti, G. Dellepiane… in MRS Online Proceedings Library (1990)

  12. No Access

    Article

    SiC-like structures in edge-defined film-fed growth poly-silicon ribbons

    B. Pivac, A. Borghesi, M. Moscardini, P. Bottazzi… in Journal of Materials Science Letters (1990)

  13. No Access

    Article

    Oxygen and Iron Redistribution upon Thermal Treatment in Iron Implanted Silicon

    In order to study the iron-oxygen interaction and their redistribution in silicon, different doses of 100 keV iron ions have been implanted into CZ silicon substrates, and subsequently annealed. The redistribu...

    B. Pivac, A. Borghesi, L. Ottolini, M. Geddo, A. Piaggi… in MRS Online Proceedings Library (1989)

  14. No Access

    Article

    Solid Solutions of AB2C4 Defect Semiconductors

    AB2C4 defect semiconductors can be thought of as generalized zincblende compounds, in which the presence of two different cations and of vacant sites favours the formation of several crystalline phases. In this w...

    T. M. de Pascale, M. Marinelli, F. Meloni, G. Mula… in MRS Online Proceedings Library (1988)