21 Result(s)
within
**ghai Chen
Molecular Medicine
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Article
Open AccessSingle-cell RNA transcriptomic reveal the mechanism of MSC derived small extracellular vesicles against DKD fibrosis
Diabetic kidney disease (DKD), a chronic kidney disease, is characterized by progressive fibrosis caused due to persistent hyperglycemia. The development of fibrosis in DKD determines the patient prognosis, bu...
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Open AccessDevelopment and validation of a ferroptosis-related lncRNAs signature to predict prognosis and microenvironment for melanoma
Ferroptosis plays an important role in cancer. However, studies about ferroptosis-related lncRNAs (FRLs) in skin cutaneous melanoma (SKCM) are scarce. Moreover, the relationship between prognostic FRLs and tum...
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Article
Open AccessA novel quantification platform for point-of-care testing of circulating MicroRNAs based on allosteric spherical nanoprobe
MiRNA-150, a gene regulator that has been revealed to be abnormal expression in non-small cell lung cancer (NSCLC), can be regarded as a serum indicator for diagnosis and monitoring of NSCLC. Herein, a new sor...
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Open AccessObservation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas
The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. The spin transverse force has been determined by fitting the photo-induced in...
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Article
Open AccessFerroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions
Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under +...
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Open AccessTuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-ba...
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Open AccessSpin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light
The spin diffusion and drift at different excitation wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs multiple quantum well (MQW). The spin polarization was created by optical ...
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Article
Microcephaly-dystonia due to mutated PLEKHG2 with impaired actin polymerization
Rearrangement of the actin cytoskeleton is controlled by RhoGTPases which are activated by RhoGEFs. We identified homozygosity for Arg204Trp mutation in the Rho guanidine exchange factor (RhoGEF) PLEKHG2 gene ...
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Open AccessObservation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well
We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optic...
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Article
Modeling the mitochondrial cardiomyopathy of Barth syndrome with induced pluripotent stem cell and heart-on-chip technologies
Cardiomyocytes generated from induced pluripotent cells hold great promise for understanding and treating heart disease. William Pu and his colleagues apply new technologies for studying such cardiomyocytes fr...
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Open AccessObservation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
We experimentally studied the magneto-photocurrents generated by direct interband transition in InAs/GaSb type II superlattice. By varying the magnetic field direction, we observed that an in-plane magnetic fi...
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Article
Open AccessSpin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells
Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/GaAs/AlGaAs step quantum wells (Q...
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Article
Open AccessInAs-mediated growth of vertical InSb nanowires on Si substrates
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabrica...
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Open AccessIn-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- ...
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Open AccessRaman study on zinc-blende single InAs nanowire grown on Si (111) substrate
We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blen...
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Article
Open AccessControl of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition (MOCVD). ZnO films exhibit non...
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Open AccessWetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. ...
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Open AccessEffect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found th...
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Open AccessOptical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In0.15Ga0.85As quantum well (QW) as cap** layer above InAs quantum dots (QDs), via temperature-...
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Open AccessValence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) a...
