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within Conference Paper Remove this filter S. K. Clowes Remove this filter Optical and Electronic Materials Remove this filter

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    Chapter and Conference Paper

    Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well

    A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-...

    W. R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle… in Narrow Gap Semiconductors 2007 (2008)

  2. No Access

    Chapter and Conference Paper

    Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells

    We have used time resolved spectroscopy to measure the relaxation of spin polarisation in InSb/AlInSb quantum wells as a function of temperature and mobility. The results are consistent with the degenerate D’Y...

    K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad… in Narrow Gap Semiconductors 2007 (2008)