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    Chapter and Conference Paper

    STEM investigations of (In,Ga)N/GaN quantum wells

    Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...

    P. Manolaki, I. Häusler, H. Kirmse… in EMC 2008 14th European Microscopy Congress… (2008)

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    Chapter and Conference Paper

    Strain relaxation in (Al,Ga)N/GaN heterostructures

    Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...

    P Vennéguès, J M Bethoux, Z Bougrioua, M Azize… in Microscopy of Semiconducting Materials (2005)

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    Chapter and Conference Paper

    Behavior of Hydrogen Introduced Under Plasma Discharge or Cathodic Polarization into Silicon

    This paper concerns recent results on hydrogen introduction, diffusion and behavior in mono and bicrystalline silicon. Plasma annealing, cathodic charging, SIMS profiling, capacity-voltage measurement and LBIC...

    A. Chari, P. de Mierry, M. Aucouturier in Seventh E.C. Photovoltaic Solar Energy Conference (1987)