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Chapter and Conference Paper
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra
The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...
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Chapter and Conference Paper
Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure
We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...