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  1. No Access

    Chapter and Conference Paper

    Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC

    Nitrogen-doped 6H-SiC samples are investigated by Hall and FTIR measurements. Four series of nitrogen-related absorption lines are observed in the spectral regions from 400 to 700 cm−1 and 1000 to 1250 cm−1. The ...

    W. Suttrop, G. Pensl, W. J. Choyke… in Amorphous and Crystalline Silicon Carbide … (1992)

  2. No Access

    Chapter and Conference Paper

    Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers

    Ion implantation of aluminum and nitrogen in 6H-SiC is investigated using Rutherford backscattering in the channeling mode (RBS/C) and Hall effect for structural and electrical characterization of the implante...

    W. Suttrop, H. Zhang, M. Schadt, G. Pensl… in Amorphous and Crystalline Silicon Carbide … (1992)