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Chapter
Selective Epitaxy for Ridge and Edge Quantum Wire Structures: Morphology and Purity Issues
Some years ago, the advantages of employing semiconductor quantum wire (QWI) and quantum box (QB) structures for both transport and optical devices were pointed out [1]–[4]. For example, the elastic scattering...
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Chapter
Control of Electron Population by Intersubband Optical Excitation in a novel Asymmetric Double Quantum Well Structure
A novel scheme of electron pum** in asymmetric double quantum well (QW) structure is studied, in which an intersubband excitation induces an interwell tunneling via the second subbands, making electrons tran...
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Chapter and Conference Paper
Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Laser
We demonstrate that a V-groove edge quantum wire structure is formed by a novel ultrahigh-vacuum patterning technique where epitaxially grown InAs is used as an etching mask. The technique utilizes a unique fe...
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Chapter
Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures
Atomic-scale understanding and controllability of heterointerfaces in MBE-grown quantum wells and other microstructures are reviewed mainly on the basis of our systematic study using the mobility, photolumines...
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Chapter
An NDE System for the Detection of Early Damage in High-Temperature Rotors
The assessment and extension of the life of fossil power plants is now a matter of prime importance for the electricity industry.1 Consequently, in recent years, advances in life prediction methods, especially fo...