![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Chapter and Conference Paper
Behavior of Hydrogen Introduced Under Plasma Discharge or Cathodic Polarization into Silicon
This paper concerns recent results on hydrogen introduction, diffusion and behavior in mono and bicrystalline silicon. Plasma annealing, cathodic charging, SIMS profiling, capacity-voltage measurement and LBIC...
-
Chapter and Conference Paper
Strain relaxation in (Al,Ga)N/GaN heterostructures
Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...
-
Chapter and Conference Paper
STEM investigations of (In,Ga)N/GaN quantum wells
Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...