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  1. Article

    Open Access

    Tuning of power factor in bismuth selenide through Sn/Te co do** for low temperature thermoelectric applications

    The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ ph...

    Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Ramakrishna Nayak… in Applied Physics A (2024)

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  2. No Access

    Article

    Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes

    The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different ...

    S.-H. Yen, M.-C. Tsai, M.-L. Tsai, Y.-J. Shen, T.-C. Hsu, Y.-K. Kuo in Applied Physics A (2009)

  3. No Access

    Article

    A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

    Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confi...

    S.-W. Hsieh, Y.-K. Kuo in Applied Physics A (2006)

  4. No Access

    Article

    First-principles calculation for bowing parameter of wurtzite AlxGa1-xN

    Numerical calculation based on first-principles is applied to study the structural characteristics and the band-energy properties of wurtzite AlxGa1-xN. The lattice constants obtained from the equilibrium energy ...

    B.-T. Liou, S.-H. Yen, Y.-K. Kuo in Applied Physics A (2005)

  5. No Access

    Article

    Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

    Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP las...

    M.-F. Huang, M.-L. Tsai, J.-Y. Shin, Y.-L. Sun, R.-M. Yang, Y.-K. Kuo in Applied Physics A (2005)

  6. No Access

    Article

    A numerical study of dc characteristics of HEMT with p -type δ -doped barrier

    The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The ...

    Y. Chang, Y.-K. Kuo in Applied Physics A (2005)

  7. No Access

    Article

    Vegard’s law deviation in band gap and bowing parameter of AlxIn1-xN

    Numerical simulation based on first-principle calculations is applied to study the wurtzite AlxIn1-xN. Simulation results suggest that the Vegard’s law deviation parameter is 0.063 ± 0.014 Å for the a lattice con...

    B.-T. Liou, S.-H. Yen, Y.-K. Kuo in Applied Physics A (2005)