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  1. No Access

    Article

    Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures

    The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) s...

    P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya… in Semiconductors (2011)

  2. No Access

    Article

    Spinodal Decomposition of Ga x In1−x As y P1−y Quaternary Alloys

    Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surfac...

    P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya… in Semiconductors (2011)

  3. No Access

    Article

    Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions

    It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si ...

    P. V. Seredin, E. P. Domashevskaya, V. E. Ternovaya… in Physics of the Solid State (2013)

  4. No Access

    Article

    X-ray diffraction studies of heterostructures based on solid solutions Al x Ga1 − x As y P1 − y : Si

    The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al x Ga1−x As heavily doped with phosphorus and silicon has been s...

    P. V. Seredin, V. E. Ternovaya, A. V. Glotov, A. S. Len’shin… in Physics of the Solid State (2013)

  5. No Access

    Article

    Al x Ga1 − x As/GaAs(100) hetermostructures with anomalously high carrier mobility

    Structural and spectroscopic methods are used to study the epitaxial layers of n-type Al x Ga1 − x As solid solutions produced by the metal-organi...

    P. V. Seredin, D. L. Goloshchapov, A. S. Lenshin, V. E. Ternovaya… in Semiconductors (2015)

  6. No Access

    Article

    Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations

    IR and UV spectroscopy is used to study the properties of nanostructured aluminum nitride films obtained via reactive ion-plasma sputtering on GaAs substrates with different orientations. Nanostructured thin (...

    P. V. Seredin, D. A. Goloschapov… in Bulletin of the Russian Academy of Science… (2017)