![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations
IR and UV spectroscopy is used to study the properties of nanostructured aluminum nitride films obtained via reactive ion-plasma sputtering on GaAs substrates with different orientations. Nanostructured thin (...
-
Article
Al x Ga1 − x As/GaAs(100) hetermostructures with anomalously high carrier mobility
Structural and spectroscopic methods are used to study the epitaxial layers of n-type Al x Ga1 − x As solid solutions produced by the metal-organi...
-
Article
Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions
It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si ...
-
Article
X-ray diffraction studies of heterostructures based on solid solutions Al x Ga1 − x As y P1 − y : Si
The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al x Ga1−x As heavily doped with phosphorus and silicon has been s...
-
Article
Spinodal Decomposition of Ga x In1−x As y P1−y Quaternary Alloys
Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surfac...
-
Article
Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures
The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) s...