-
Article
Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...
-
Article
Open AccessFiltering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...
-
Article
Light-induced defects in plasma-hydrogenated InP: Zn
PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, ...
-
Article
Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon
Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm-3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model...
-
Article
Modeling of the Diffusion of Hydrogen in Silicon
A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperat...