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    Article

    Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys

    The density of states in a-Six C1-x:H and a-Cy Sn1-y:H (F) semiconducting materials has been investigated by phototheTmal deflection spectroscopy (PDS) and their photoconductive properties have been related to th...

    P. Mpawenayo, M. Nsabimana in MRS Online Proceedings Library (1987)

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    Article

    Physical properties and structure ofa-Si1−x C x : H alloy films

    Two sets ofa-SiC:H films were deposited by glow discharge in an Ar-SiH4-CH4 atmosphere to investigate the effect of a variable CH4/SiH4 ratio on the physical properties. The composition of the films was determine...

    F. Demichelis, G. Kaniadakis, E. Mezzetti, P. Mpawenayo in Il Nuovo Cimento D (1987)

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    Article

    Thickness Dependence of the Optical and Electrical Properties of Thin a-Si:H Films

    Optical and electrical properties are investigated as a function of thickness for two sets of samples of a-Si:H films deposited respectively by RF magnetron sputtering and by RF glow discharge under the same c...

    F. Demichelis, E. Mezzetti, P. Mpawenayo, A. Tagliaferro in MRS Online Proceedings Library (1986)