Page
%P
-
Article
Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures
Multilayer GaN/AlxGa1−xN structures were grown on a sapphire substrate using metalorganic chemical vapor deposition at atmospheric pressure. The impurities diffusion was studied using secondary ion mass spectrome...
-
Article
(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness
The impact of GaN buffer layer thickness on the properties of GaN films grown by MOVPE on (001), (113), and (111) GaAs substrate orientations were investigated. GaN buffer layers with thickness of dBL = 65 nm and...