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  1. No Access

    Article

    Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

    Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation ene...

    X. C. Wei, L. Zhang, N. Zhang, J. X. Wang, J. M. Li in MRS Advances (2016)

  2. No Access

    Article

    An Improved In-line Inkjet Printing Process for 3D Multilayer Passive Devices

    This paper describes an in-line process for the realization of 3D electronic components on A4 format substrate by piezo inkjet printing. This process is developed within a semi-industrial prototype system name...

    A. Yakoub, M. Saadaoui, R. Cauchois, J-M. Li, P. Benaben in MRS Online Proceedings Library (2012)

  3. No Access

    Article

    High-Mobility Ga-Polarity GaN achieved by NH3-MBE

    GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface...

    J. X. Wang, X. L. Wang, D. Z. Sun, J. M. Li, Y. P. Zeng… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Thermal Expansion of Phase-Change Random Access Memory Cells

    Three-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at t...

    J. M. Li, L. P. Shi, H. X. Yang, K. G. Lim, X. S. Miao… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Thermal analysis of nonvolatile and non rotation phase change memory cell

    In this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect ge...

    L. P. Shi, T. C. Chong, J. M. Li, H. X. Yang, J. Q. Mou in MRS Online Proceedings Library (2003)

  6. No Access

    Article

    Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

    Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearl...

    Q. D. Zhuang, J. M. Li, Y. P. Zeng, L. Pan, Y. H. Chen… in Journal of Electronic Materials (1999)

  7. No Access

    Article

    Stress corrosion studies of ion implanted austenitic steel

    Stress corrosion studies of 50 Mn18Cr4 austenitic steel implanted with 120 keV N+, 100 keV Cr+, 200keV and 400 keV Er+ ions were carried out by constant strain method in the nitrate solution. Surface composition ...

    X. L. Zhang, J. C. **, Z. **e, J. M. Li, P. D. Wang… in Journal of Materials Science (1999)

  8. No Access

    Article

    Low temperature anneal-embrittlement of (Fe0.99Mo0.01)78Si9B13 amorphous ribbon: boron segregation?

    Abstracts are not published in this journal

    J. M. Li, M. X. Quan, Z. Q. Hu in Journal of Materials Science Letters (1997)