SpringerLink
Log in

Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

  • Published:
MRS Advances Aims and scope Submit manuscript

Abstract

Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (France)

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Nakamura S, Science 281, 956 (1998)

    Article  CAS  Google Scholar 

  2. Watson-Parris D, Godfrey M J and Dawson P, Phys. Rev. B 83, 115321(2011)

    Article  Google Scholar 

  3. Zhao H P, Liu G Y and Tansu N, Appl. Phys. Lett. 97, 131114 (2010)

    Article  Google Scholar 

  4. Noh Y K, Kim M D and Oh J E, J. Appl. Phys. 110 , 123108 (2011)

    Article  Google Scholar 

  5. Wang T, Bai J, Sakai S, and Ho J K, Appl. Phys. Lett. 78, 2617 (2001)

    Article  CAS  Google Scholar 

  6. Schomig H, Halm S, Forchel A, Bacher G, Off J and Scholz F, Phys. Rev. Lett. 92, 106802 (2004)

    Article  CAS  Google Scholar 

  7. Wang H L, Ji Z W, Qu S, Wang G, Jiang Y Z, Liu B L, Xu X G, and Mino H, Optics Express 20, 3932 (2012)

    Article  CAS  Google Scholar 

  8. Sun Y, Cho Y H, Kim H M, Kang T W, Kwon S Y and Yoon E, J. Appl. Phys. 100, 043520 (2006)

    Article  Google Scholar 

  9. Hugues M, Damilano B, Duboz J Y and Massies, J Phys. Rev. B 75, 115337 (2007)

    Article  Google Scholar 

  10. Hao M, Zhang J, Zhang X H and Chua S, Appl. Phys. Lett. 81, 5129 (2002)

    Article  CAS  Google Scholar 

  11. Han S H, Cho CY, Lee S J, Park T Y, Kim T H, Park S H, Kang S W, Kim J W, Kim Y C and Park S J, Appl. Phys. Lett. 96, 051113 (2010)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Bei**g Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Bei**g, 100083, People’s Republic of China

    X. C. Wei, L. Zhang, N. Zhang, J. X. Wang & J. M. Li

Authors
  1. X. C. Wei
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. X. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. M. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wei, X.C., Zhang, L., Zhang, N. et al. Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness. MRS Advances 1, 197–202 (2016). https://doi.org/10.1557/adv.2016.134

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/adv.2016.134

Search

Navigation