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  1. No Access

    Article

    Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown

    Controlling the position of a magnetic domain wall with electric current1,2,3,4,5,6,7,8,9,10,11 may allow for new types of non-volatile memory and logic devices10,12,13,14. To be practical, however, the threshold...

    T. Koyama, K. Ueda, K.-J. Kim, Y. Yoshimura, D. Chiba, K. Yamada… in Nature Nanotechnology (2012)

  2. No Access

    Article

    New Self-Organized Nanostructure: Chain of Crystalline-Silicon Nanospheres

    We have grown chains of crystalline-Si nanospheres: the crystalline-Si nanospheres of about 10 nm in diameter are supported in amorphous silica and carbon at a nearly equal spacing by a self-organized process....

    H. Kohno, S. Takeda, T. Iwasaki in MRS Online Proceedings Library (1999)