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Article
Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits
We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer o...
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Article
Open AccessHigh-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding
A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffe...
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Article
Integrated Optoelectronic Devices on Silicon
Silicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconducto...
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Article
Hybrid III-V-on-Silicon Microring Lasers
Hybrid silicon laser is a promising solution to enable high-performance light source on large-scale, silicon-based photonic integrated circuits (PICs). As a compact laser cavity design, hybrid microring lasers...