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    Article

    Characterization of oxygen precipitates in Czochralski silicon by imaging SIMS

    This paper presents a three-dimensional characterization of oxygen defects in Czochralski-silicon (CZ) by 3D-SIMS using a camera based imaging system. Different manufacturing processes yielding a variation in ...

    Stefan Gara, Herbert Hutter, Gerhard Stingeder, Chunsheng Tian… in Microchimica Acta (1992)

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    Article

    Boron implantation in Si: Channeling effects studied by SIMS and simulation

    The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the project...

    Chunsheng Tian, Stefan Gara, Gerhard Hobler, Gerhard Stingeder in Microchimica Acta (1992)