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    Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes

    Eutectic aluminum–germanium wafer bonding was used to fabricate (AlGaIn)N thin-film light-emitting diodes (LEDs). Wafer bonding was carried out on 2″ wafer level at a bond temperature of 470 °C using patterned...

    Christian Goßler, Michael Kunzer, Mario Baum, Maik Wiemer… in Microsystem Technologies (2013)